Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition
文献类型：期刊论文
| 作者 | Yijian Liang; Jing Li; Xiaoming Ge; ShiKe Hu; Guanghui Yu; Peng SA(彭松昂) ; Jin Z(金智); Liu XY(刘新宇); ZhiYing Chen; Yanhui Zhang
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| 刊名 | RSC Advances
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| 出版日期 | 2018-05-22 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19003]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Yijian Liang,Jing Li,Xiaoming Ge,et al. Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition[J]. RSC Advances,2018. |
| APA | Yijian Liang.,Jing Li.,Xiaoming Ge.,ShiKe Hu.,Guanghui Yu.,...&YanPing Sui.(2018).Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition.RSC Advances. |
| MLA | Yijian Liang,et al."Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition".RSC Advances (2018). |
入库方式： OAI收割
来源：微电子研究所
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