Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices
文献类型：期刊论文
| 作者 | Ran He; Fengwen Mu; Yinghui Wang; Tadatomo Suga |
| 刊名 | Acta Materialia
 |
| 出版日期 | 2018-09-25 |
| 源URL | [http://159.226.55.107/handle/172511/19030]  |
| 专题 | 微电子研究所_智能感知研发中心 |
| 推荐引用方式 GB/T 7714 | Ran He,Fengwen Mu,Yinghui Wang,et al. Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices[J]. Acta Materialia,2018. |
| APA | Ran He,Fengwen Mu,Yinghui Wang,&Tadatomo Suga.(2018).Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices.Acta Materialia. |
| MLA | Ran He,et al."Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices".Acta Materialia (2018). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。