A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability
文献类型：期刊论文
| 作者 | Yuan J(袁甲); Kong DB(孔得斌); Qiao SS(乔树山) |
| 刊名 | IEICE Electronics Express
 |
| 出版日期 | 2018-09-11 |
| 源URL | [http://159.226.55.107/handle/172511/19031]  |
| 专题 | 微电子研究所_智能感知研发中心 |
| 推荐引用方式 GB/T 7714 | Yuan J,Kong DB,Qiao SS. A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability[J]. IEICE Electronics Express,2018. |
| APA | 袁甲,孔得斌,&乔树山.(2018).A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability.IEICE Electronics Express. |
| MLA | 袁甲,et al."A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability".IEICE Electronics Express (2018). |
入库方式： OAI收割
来源：微电子研究所
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