Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
文献类型：期刊论文
| 作者 | Chen, SJ; Zhang, J ; Wang, XL; Han, K; Wang, WW; Ma, XL; Chen, DP; Du, J; Xiong, YH; Huang, AP
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| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 96期号:15页码:3,152907-1-052907-3 |
| 关键词 | Schottky Barriers Surface States Gap States |
| ISSN号 | 0003-6951 |
| 英文摘要 | A physical model on dipole formation at high-k/SiO2 interface is proposed to study possible mechanism of flatband voltage (V-FB) shift in metal-oxide-semiconductor device with high-k/metal gate structure. Dielectric contact induced gap states (DCIGS) on h |
| 公开日期 | 2010-11-26 |
| 源URL | [http://10.10.10.126/handle/311049/8996]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Chen, SJ,Zhang, J,Wang, XL,et al. Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure[J]. APPLIED PHYSICS LETTERS,2010,96(15):3,152907-1-052907-3. |
| APA | Chen, SJ.,Zhang, J.,Wang, XL.,Han, K.,Wang, WW.,...&Huang, AP.(2010).Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure.APPLIED PHYSICS LETTERS,96(15),3,152907-1-052907-3. |
| MLA | Chen, SJ,et al."Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure".APPLIED PHYSICS LETTERS 96.15(2010):3,152907-1-052907-3. |
入库方式： OAI收割
来源：微电子研究所
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