Effects of carbon pre-silicidation implant into Si substrate on NiSi
文献类型：期刊论文
| 作者 | Chou ZJ(仇志军); Luo J(罗军); Deng J(邓坚) |
| 刊名 | Microelectronic engineering
 |
| 出版日期 | 2013-09-01 |
| 英文摘要 | In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 10 15cm 2 in practical application in accordance with the results achieved in this work. |
| 公开日期 | 2014-10-30 |
| 源URL | [http://10.10.10.126/handle/311049/12044]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 通讯作者 | Luo J(罗军) |
| 推荐引用方式 GB/T 7714 | Chou ZJ,Luo J,Deng J. Effects of carbon pre-silicidation implant into Si substrate on NiSi[J]. Microelectronic engineering,2013. |
| APA | 仇志军,罗军,&邓坚.(2013).Effects of carbon pre-silicidation implant into Si substrate on NiSi.Microelectronic engineering. |
| MLA | 仇志军,et al."Effects of carbon pre-silicidation implant into Si substrate on NiSi".Microelectronic engineering (2013). |
入库方式： OAI收割
来源：微电子研究所
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