Variation of Schottky barrier height induced by dopant segregation
文献类型：期刊论文
| 作者 | Chou ZJ(仇志军); Luo J(罗军); Deng J(邓坚) |
| 刊名 | Microelectronic engineering
 |
| 出版日期 | 2013-09-01 |
| 英文摘要 | Change of contact resistivity (qc) is monitored for evaluation of Schottky barrier height (SBH) variation induced by dopant segregation (DS). This method is particularly advantageous for metal–semiconductor contacts of small SBH, as it neither requires low-temperature measurement needed in current–voltage characterization of Schottky diodes nor is affected by reverse leakage current often troubling capacitance–voltage characterization. With PtSi contact to both n- and p-type diffusion regions, and the use of opposite or alike dopants implant into pre-formed PtSi films followed by drive-in anneal at different temperatures to induce DS at PtSi/Si interface, the formation of interfacial dipole is confirmed as the responsible cause for modification of effective SBHs thus the increase or decrease ofqc. A tentative explanation for the change of contact resistivity based on interfacial dipole theory is provided in this work. Influences and interplay of interfacial dipole and space charge on effective SBH are also discussed. |
| 公开日期 | 2014-10-30 |
| 源URL | [http://10.10.10.126/handle/311049/12048]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 通讯作者 | Luo J(罗军) |
| 推荐引用方式 GB/T 7714 | Chou ZJ,Luo J,Deng J. Variation of Schottky barrier height induced by dopant segregation[J]. Microelectronic engineering,2013. |
| APA | 仇志军,罗军,&邓坚.(2013).Variation of Schottky barrier height induced by dopant segregation.Microelectronic engineering. |
| MLA | 仇志军,et al."Variation of Schottky barrier height induced by dopant segregation".Microelectronic engineering (2013). |
入库方式： OAI收割
来源：微电子研究所
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