Achieving large on-state current at low power supply voltage is one great challenge for tunneling transistors (TFETs). In this paper, an N-type Green transistor (gFET) with an ultra-shallow pocket junction has been fabricated. The main feature of the device is that the pocket junction was formed by germanium (Ge) preamorphization implantation (PAI) plus arsenic (As) ultra-low energy implantation combined with spike annealing.