半导体器件及其制造方法
文献类型:专利
作者 | 李春龙![]() ![]() ![]() |
发表日期 | 2014-04-22 |
专利号 | US8703567 |
著作权人 | 中国科学院微电子研究所 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | The present invention discloses a method for manufacturing a semiconductor device, comprising: forming an insulating isolation layer on a substrate; forming an insulating isolation layer trench in the insulating isolation layer; forming an active region layer in the insulating isolation layer trench; forming a semiconductor device structure in and above the active region layer; characterized in that the carrier mobility of the active region layer is higher than that of the substrate. Said active region is formed of a material different from that of the substrate, the carrier mobility in the channel region is enhanced, thereby the device response speed is improved and the device performance is enhanced. Unlike the existing STI manufacturing process, for the present invention, an STI is formed first, and then filling is performed to form an active region, thus avoiding the problem of generation of holes in STI, and improving the device reliability. |
公开日期 | 2012-12-27 |
申请日期 | 2011-11-29 |
语种 | 中文 |
源URL | [http://10.10.10.126/handle/311049/13204] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 李春龙,王桂磊,赵超. 半导体器件及其制造方法. US8703567. 2014-04-22. |
入库方式: OAI收割
来源:微电子研究所
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