Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket
文献类型：期刊论文
| 作者 | Chen DP(陈大鹏) ; Ye TC(叶甜春); Zhu HL(朱慧珑); Yin HX(殷华湘); Xu M(许淼); Zhong J(钟健); Li JF(李俊峰); Zhao C(赵超)
|
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2015-05-18 |
| 公开日期 | 2016-05-31 |
| 源URL | [http://10.10.10.126/handle/311049/15033]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Chen DP,Ye TC,Zhu HL,et al. Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket[J]. IEEE ELECTRON DEVICE LETTERS,2015. |
| APA | Chen DP.,Ye TC.,Zhu HL.,Yin HX.,Xu M.,...&Zhao C.(2015).Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket.IEEE ELECTRON DEVICE LETTERS. |
| MLA | Chen DP,et al."Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket".IEEE ELECTRON DEVICE LETTERS (2015). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。