Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process
文献类型：期刊论文
| 作者 | Qi LW(祁路伟); Wang WW(王文武)
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| 刊名 | Chinese Physics B
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| 出版日期 | 2015-12-05 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/16068]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Qi LW,Wang WW. Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process[J]. Chinese Physics B,2015. |
| APA | Qi LW,&Wang WW.(2015).Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process.Chinese Physics B. |
| MLA | Qi LW,et al."Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process".Chinese Physics B (2015). |
入库方式： OAI收割
来源：微电子研究所
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