High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-k/Metal Gates
文献类型：期刊论文
| 作者 | Mao SJ(毛淑娟) ; Zhu ZY(朱正勇); Wang GL(王桂磊); Zhu HL(朱慧珑); Li JF(李俊峰); Zhao C(赵超)
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| 刊名 | CHIN. PHYS. LETT.
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| 出版日期 | 2016-09-30 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Strained-Si0.73Ge0.27 channels are successfully integrated with high-？？/metal gates in p-type metal-oxide- semiconductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-dielectric to improve the interface. The fabricated Si0.73Ge0.27 pMOSFETs with gate length of 30nm exhibit good performance with high drive current (～428 A/m at DD = 1 V) and suppressed short-channel effects. |
| 源URL | [http://159.226.55.106/handle/172511/16205]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Mao SJ,Zhu ZY,Wang GL,et al. High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-k/Metal Gates[J]. CHIN. PHYS. LETT.,2016. |
| APA | Mao SJ,Zhu ZY,Wang GL,Zhu HL,Li JF,&Zhao C.(2016).High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-k/Metal Gates.CHIN. PHYS. LETT.. |
| MLA | Mao SJ,et al."High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-k/Metal Gates".CHIN. PHYS. LETT. (2016). |
入库方式： OAI收割
来源：微电子研究所
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