Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer
文献类型：期刊论文
| 作者 | Luo WC(罗维春); Yang H(杨红) ; Wang WW(王文武); Zhu HL(朱慧珑); Zhao C(赵超); Chen DP(陈大鹏); Ye TC(叶甜春); Tang B(唐波); Ren SQ(任尚清); Xu H(徐昊)
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| 刊名 | Microelectronics Reliability
 |
| 出版日期 | 2016-05-02 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Channel hot carrier (CHC) degradation in sub-1 nm equivalent oxide thickness (EOT) HK/MG nMOSFET has been studied in this paper. It is found that the degradation can be divided into two regimes based on stress induced drain-induced-barrier-lowering (DIBL) variation, namely higher stress drain voltage regime and lower stress drain voltage regime. Cause of the division is attributed to different activities of hot carriers. |
| 源URL | [http://159.226.55.106/handle/172511/16220]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Luo WC,Yang H,Wang WW,et al. Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer[J]. Microelectronics Reliability,2016. |
| APA | Luo WC.,Yang H.,Wang WW.,Zhu HL.,Zhao C.,...&Yan J.(2016).Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.Microelectronics Reliability. |
| MLA | Luo WC,et al."Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer".Microelectronics Reliability (2016). |
入库方式： OAI收割
来源：微电子研究所
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