Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation
文献类型：期刊论文
| 作者 | Xu H(徐昊) ; Yang H(杨红); Wang YR(王艳蓉); Luo WC(罗维春); Qi LW(祁路伟); Li JF(李俊峰); Zhao C(赵超); Chen DP(陈大鹏); Ye TC(叶甜春)
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| 刊名 | Chinese Physics B
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| 出版日期 | 2016-06-25 |
| 文献子类 | 期刊论文 |
| 英文摘要 | High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. |
| 源URL | [http://159.226.55.106/handle/172511/16221]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Xu H,Yang H,Wang YR,et al. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation[J]. Chinese Physics B,2016. |
| APA | Xu H.,Yang H.,Wang YR.,Luo WC.,Qi LW.,...&Ye TC.(2016).Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation.Chinese Physics B. |
| MLA | Xu H,et al."Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation".Chinese Physics B (2016). |
入库方式： OAI收割
来源：微电子研究所
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