Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-K metal gate NMOSFET with kMC TDDB simulations
文献类型：期刊论文
| 作者 | Xu H(徐昊); Yang H(杨红); Luo WC(罗维春); Wang YR(王艳蓉); Tang B(唐波); Qi LW(祁路伟); Li JF(李俊峰); Yan J(闫江); Zhu HL(朱慧珑) |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2016-06-25 |
| 文献子类 | 期刊论文 |
| 英文摘要 | The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy(SIMS) analysis |
| 源URL | [http://159.226.55.106/handle/172511/16222]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 推荐引用方式 GB/T 7714 | Xu H,Yang H,Luo WC,et al. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-K metal gate NMOSFET with kMC TDDB simulations[J]. Chinese Physics B,2016. |
| APA | 徐昊.,杨红.,罗维春.,王艳蓉.,唐波.,...&朱慧珑.(2016).Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-K metal gate NMOSFET with kMC TDDB simulations.Chinese Physics B. |
| MLA | 徐昊,et al."Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-K metal gate NMOSFET with kMC TDDB simulations".Chinese Physics B (2016). |
入库方式： OAI收割
来源：微电子研究所
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