Integration of Selective Epitaxial Growth of SiGe/Ge layers in 14nm Node FinFETs
文献类型：期刊论文
| 作者 | Yin HX(殷华湘) ; Wang GL(王桂磊); Luo J(罗军); Qin ZL(秦长亮); Cui HS(崔虎山); Liu JB(刘金彪); Jia KP(贾昆鹏); Li JJ(李俊杰); Yang T(杨涛); Li JF(李俊峰)
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| 刊名 | ECS Transactions
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| 出版日期 | 2016 |
| 文献子类 | 期刊论文 |
| 英文摘要 | In this study, the process integration of SiGe selective epitaxy on source/drain and SiGe/Ge bilayers selectively epitaxy on replacement Si channel regions for 14 nm node FinFETs has been presented. The epi-quality, layer profile and strain amount of the selectively grown SiGe and Ge layers were also investigated by means of various characterization tools. |
| 源URL | [http://159.226.55.106/handle/172511/16224]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Yin HX,Wang GL,Luo J,et al. Integration of Selective Epitaxial Growth of SiGe/Ge layers in 14nm Node FinFETs[J]. ECS Transactions,2016. |
| APA | Yin HX.,Wang GL.,Luo J.,Qin ZL.,Cui HS.,...&Ye TC.(2016).Integration of Selective Epitaxial Growth of SiGe/Ge layers in 14nm Node FinFETs.ECS Transactions. |
| MLA | Yin HX,et al."Integration of Selective Epitaxial Growth of SiGe/Ge layers in 14nm Node FinFETs".ECS Transactions (2016). |
入库方式： OAI收割
来源：微电子研究所
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