Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs
文献类型：期刊论文
| 作者 | Fang W(方雯); Eddy Simoen ; Ye TC(叶甜春); Zhao C(赵超); Luo J(罗军)
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| 刊名 | IEEE Eletrcon Device Letters
 |
| 出版日期 | 2016-04-01 |
| 文献子类 | 期刊论文 |
| 英文摘要 | The impact of the effective work function (EWF) gate metal on the low-frequency noise behavior of n-type gate-all-around nanowire (NW) FETs has been investigated. A clear reduction of the noise power spectral density has been observed for n-type TiAl-based EWF-metal gate NWFETs, indicating a reduction of the oxide trap density in the high-κ dielectric. |
| 源URL | [http://159.226.55.106/handle/172511/16229]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Fang W,Eddy Simoen,Ye TC,et al. Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs[J]. IEEE Eletrcon Device Letters,2016. |
| APA | Fang W,Eddy Simoen,Ye TC,Zhao C,&Luo J.(2016).Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs.IEEE Eletrcon Device Letters. |
| MLA | Fang W,et al."Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs".IEEE Eletrcon Device Letters (2016). |
入库方式： OAI收割
来源：微电子研究所
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