中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
半导体器件及其制造方法

文献类型:专利

作者赵治国; 陆智勇; 张永奎; 朱慧珑; 殷华湘
发表日期2016-08-30
专利号US9431504
著作权人中国科学院微电子研究所
国家美国
文献子类发明专利
英文摘要

A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided.

公开日期2016-03-24
申请日期2015-04-27
语种中文
源URL[http://159.226.55.106/handle/172511/16592]  
专题微电子研究所_集成电路先导工艺研发中心
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
赵治国,陆智勇,张永奎,等. 半导体器件及其制造方法. US9431504. 2016-08-30.

入库方式: OAI收割

来源:微电子研究所

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