半导体器件及其制造方法
文献类型:专利
作者 | 赵治国![]() ![]() ![]() ![]() ![]() |
发表日期 | 2016-08-30 |
专利号 | US9431504 |
著作权人 | 中国科学院微电子研究所 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided. |
公开日期 | 2016-03-24 |
申请日期 | 2015-04-27 |
语种 | 中文 |
源URL | [http://159.226.55.106/handle/172511/16592] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 赵治国,陆智勇,张永奎,等. 半导体器件及其制造方法. US9431504. 2016-08-30. |
入库方式: OAI收割
来源:微电子研究所
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