Hetero-Epitaxy and Self-Adaptive Stressor Based on Freestanding Fin for the 10 nm Node and Beyond
文献类型：期刊论文
| 作者 | Zhu HL(朱慧珑); Wang GL(王桂磊); Wan GX(万光星) |
| 刊名 | Chinese Physics Letters
 |
| 出版日期 | 2017-06-23 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18101]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 推荐引用方式 GB/T 7714 | Zhu HL,Wang GL,Wan GX. Hetero-Epitaxy and Self-Adaptive Stressor Based on Freestanding Fin for the 10 nm Node and Beyond[J]. Chinese Physics Letters,2017. |
| APA | 朱慧珑,王桂磊,&万光星.(2017).Hetero-Epitaxy and Self-Adaptive Stressor Based on Freestanding Fin for the 10 nm Node and Beyond.Chinese Physics Letters. |
| MLA | 朱慧珑,et al."Hetero-Epitaxy and Self-Adaptive Stressor Based on Freestanding Fin for the 10 nm Node and Beyond".Chinese Physics Letters (2017). |
入库方式： OAI收割
来源：微电子研究所
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