Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node
文献类型:期刊论文
作者 | Gu J(顾杰); Wen Yang; Wu ZH(吴振华); Yin HX(殷华湘); Wang WW(王文武); Yao JX(姚佳欣); Jun Li; Luo K(骆堃); Yu JH(余嘉晗); Zhang QZ(张青竹) |
刊名 | Journal of the Electron Devices Society |
出版日期 | 2018-07-01 |
文献子类 | 期刊论文 |
源URL | [http://159.226.55.107/handle/172511/19088] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Gu J,Wen Yang,Wu ZH,et al. Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node[J]. Journal of the Electron Devices Society,2018. |
APA | Gu J.,Wen Yang.,Wu ZH.,Yin HX.,Wang WW.,...&Hou CZ.(2018).Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node.Journal of the Electron Devices Society. |
MLA | Gu J,et al."Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node".Journal of the Electron Devices Society (2018). |
入库方式: OAI收割
来源:微电子研究所
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