Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology
文献类型：期刊论文
| 作者 | Zhang QZ(张青竹) ; Yao JX(姚佳欣); Yin HX(殷华湘); Wu ZH(吴振华); Gao JF(高建峰); Hou CZ(侯朝昭); Gu J(顾杰); Luo K(骆堃)
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| 刊名 | ECS Journal of Solid State Science and Technology
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| 出版日期 | 2018-07-31 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19089]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhang QZ,Yao JX,Yin HX,et al. Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology[J]. ECS Journal of Solid State Science and Technology,2018. |
| APA | Zhang QZ.,Yao JX.,Yin HX.,Wu ZH.,Gao JF.,...&Luo K.(2018).Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology.ECS Journal of Solid State Science and Technology. |
| MLA | Zhang QZ,et al."Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology".ECS Journal of Solid State Science and Technology (2018). |
入库方式： OAI收割
来源：微电子研究所
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