Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate
文献类型：期刊论文
| 作者 | Hou CZ(侯朝昭); Wu ZH(吴振华) ; Yin HX(殷华湘)
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| 刊名 | ECS Journal of Solid State Science and Technology
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| 出版日期 | 2018-07-19 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19090]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Hou CZ,Wu ZH,Yin HX. Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate[J]. ECS Journal of Solid State Science and Technology,2018. |
| APA | Hou CZ,Wu ZH,&Yin HX.(2018).Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate.ECS Journal of Solid State Science and Technology. |
| MLA | Hou CZ,et al."Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate".ECS Journal of Solid State Science and Technology (2018). |
入库方式： OAI收割
来源：微电子研究所
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