Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing
文献类型：期刊论文
| 作者 | Wei Zou; Zhijun Qiu; Dongping Wu; Luo J(罗军); Xiangbiao Zhou; Chaochao Fu; Chen Li; Feng Sun |
| 刊名 | Materials
 |
| 出版日期 | 2018-01-10 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19186]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 推荐引用方式 GB/T 7714 | Wei Zou,Zhijun Qiu,Dongping Wu,et al. Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing[J]. Materials,2018. |
| APA | Wei Zou.,Zhijun Qiu.,Dongping Wu.,罗军.,Xiangbiao Zhou.,...&Feng Sun.(2018).Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.Materials. |
| MLA | Wei Zou,et al."Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing".Materials (2018). |
入库方式： OAI收割
来源：微电子研究所
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