Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
文献类型：期刊论文
| 作者 | Burt Fowler; Yaofeng Chang; Xiaohan Wu; Xu GB(许高博); Tingchang Chang; Jack C Lee; Sungjun Kim; Huichun Huang; Chihyang Lin; Yingchen Chen |
| 刊名 | Journal of Physics D: Applied Physics
 |
| 出版日期 | 2018-01-16 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19195]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 推荐引用方式 GB/T 7714 | Burt Fowler,Yaofeng Chang,Xiaohan Wu,et al. Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application[J]. Journal of Physics D: Applied Physics,2018. |
| APA | Burt Fowler.,Yaofeng Chang.,Xiaohan Wu.,许高博.,Tingchang Chang.,...&Yingchen Chen.(2018).Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application.Journal of Physics D: Applied Physics. |
| MLA | Burt Fowler,et al."Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application".Journal of Physics D: Applied Physics (2018). |
入库方式： OAI收割
来源：微电子研究所
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