Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion inEpitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSiThicknesses
文献类型：期刊论文
| 作者 | Zhang ZH(张兆浩); Zhang QZ(张青竹); Hailing Tu; Gu SH(顾世海); Wang GL(王桂磊); Feng Wei; Tongda Ma; Hongbin Zhao; Qianhui Wei; Yin HX(殷华湘) |
| 刊名 | ECS Journal of Solid State Science and Technology
 |
| 出版日期 | 2018-09-09 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19197]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 推荐引用方式 GB/T 7714 | Zhang ZH,Zhang QZ,Hailing Tu,et al. Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion inEpitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSiThicknesses[J]. ECS Journal of Solid State Science and Technology,2018. |
| APA | 张兆浩.,张青竹.,Hailing Tu.,顾世海.,王桂磊.,...&Jiang Yan.(2018).Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion inEpitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSiThicknesses.ECS Journal of Solid State Science and Technology. |
| MLA | 张兆浩,et al."Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion inEpitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSiThicknesses".ECS Journal of Solid State Science and Technology (2018). |
入库方式： OAI收割
来源：微电子研究所
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