中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer

文献类型:期刊论文

作者Wang LZ(王乐知); Hu YP(胡艳鹏); Jiang QF(姜齐风); Cui HS(崔虎山); Zhao C(赵超); Weisheng Zhao; Cao KH(曹凯华); Huisong Li; Wenlong Cai; Wei JQ(魏家琦)
刊名IEEE Transactions on Magnetics
出版日期2018-10-14
文献子类期刊论文
源URL[http://159.226.55.107/handle/172511/19201]  
专题微电子研究所_集成电路先导工艺研发中心
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
Wang LZ,Hu YP,Jiang QF,et al. Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer[J]. IEEE Transactions on Magnetics,2018.
APA Wang LZ.,Hu YP.,Jiang QF.,Cui HS.,Zhao C.,...&Wei JQ.(2018).Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer.IEEE Transactions on Magnetics.
MLA Wang LZ,et al."Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer".IEEE Transactions on Magnetics (2018).

入库方式: OAI收割

来源:微电子研究所

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