Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
文献类型：期刊论文
| 作者 | Wang Kang; Yu Zhang; Xiaoyang Lin; Jean paul Adam; Guillaume Agnus; Wenlong Cai; Jean Rene Coudevylle; Nathalie Lsac; Jianlet Yang; Huaiwen yang |
| 刊名 | Advanced Electronic Materials
 |
| 出版日期 | 2018-01-03 |
| 文献子类 | 期刊论文 |
| 语种 | 英语 |
| 源URL | [http://159.226.55.107/handle/172511/19202]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang Kang,Yu Zhang,Xiaoyang Lin,et al. Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches[J]. Advanced Electronic Materials,2018. |
| APA | Wang Kang.,Yu Zhang.,Xiaoyang Lin.,Jean paul Adam.,Guillaume Agnus.,...&Dafine Ravelosona.(2018).Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches.Advanced Electronic Materials. |
| MLA | Wang Kang,et al."Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches".Advanced Electronic Materials (2018). |
入库方式： OAI收割
来源：微电子研究所
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