The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory
文献类型：期刊论文
| 作者 | Huo ZL(霍宗亮); Xia ZL(夏志良); Chen GX(陈国星); Zhang Y(张瑜); Jiang DD(姜丹丹); Jin L(靳磊); Zou XQ(邹兴奇) |
| 刊名 | Journal of Nanoscience and Nanotechnology
 |
| 出版日期 | 2018-08-01 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19266]  |
| 专题 | 微电子研究所_存储器研发中心 |
| 推荐引用方式 GB/T 7714 | Huo ZL,Xia ZL,Chen GX,et al. The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory[J]. Journal of Nanoscience and Nanotechnology,2018. |
| APA | 霍宗亮.,夏志良.,陈国星.,张瑜.,姜丹丹.,...&邹兴奇.(2018).The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory.Journal of Nanoscience and Nanotechnology. |
| MLA | 霍宗亮,et al."The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory".Journal of Nanoscience and Nanotechnology (2018). |
入库方式： OAI收割
来源：微电子研究所
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