中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
a-SiCx : H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications

文献类型:期刊论文

作者Jiang, LJ ; Chen, X ; Wang, XH ; Xu, LQ ; Stubhan, F ; Merkel, KH
刊名THIN SOLID FILMS
出版日期1999-01-01
卷号352期号:1-2页码:97-101
关键词SILICON CARBIDE FILMS FREQUENCY LAYERS ALLOY PECVD
ISSN号0040-6090
通讯作者Xu, LQ, Acad Sinica, Shanghai Inst Met, SIM DaimlerChrysler Lab, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2011-11-09
源URL[http://ir.sim.ac.cn/handle/331004/17483]  
专题上海微系统与信息技术研究所_化学研究_期刊论文
推荐引用方式
GB/T 7714
Jiang, LJ,Chen, X,Wang, XH,et al. a-SiCx : H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications[J]. THIN SOLID FILMS,1999,352(1-2):97-101.
APA Jiang, LJ,Chen, X,Wang, XH,Xu, LQ,Stubhan, F,&Merkel, KH.(1999).a-SiCx : H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications.THIN SOLID FILMS,352(1-2),97-101.
MLA Jiang, LJ,et al."a-SiCx : H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications".THIN SOLID FILMS 352.1-2(1999):97-101.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。