Research on metastable electron traps in the modified SOI materials induced by Si ion implantation
文献类型：期刊论文
| 作者 | Zhang, EX ; Yu, ZS ; Cao, YG ; Yang, H ; Zhang, ZX ; Wang, X |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
 |
| 出版日期 | 2008 |
| 卷号 | 26期号:2页码:L1-L4 |
| 关键词 | SIMOX BURIED OXIDES RAY PHOTOELECTRON-SPECTROSCOPY RADIATION RESPONSE OXYGEN INSULATOR |
| 通讯作者 | Zhang, EX, Shanghai Univ Engn & Sci, Dept Mat Sci & Engn, Shanghai 201620, Peoples R China |
| 学科主题 | Materials Science ; Coatings & Films; Physics ; Applied |
| 收录类别 | SCI |
| 公开日期 | 2011-11-04 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/12218]  |
| 专题 | 上海微系统与信息技术研究所_新能源技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, EX,Yu, ZS,Cao, YG,et al. Research on metastable electron traps in the modified SOI materials induced by Si ion implantation[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2008,26(2):L1-L4. |
| APA | Zhang, EX,Yu, ZS,Cao, YG,Yang, H,Zhang, ZX,&Wang, X.(2008).Research on metastable electron traps in the modified SOI materials induced by Si ion implantation.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,26(2),L1-L4. |
| MLA | Zhang, EX,et al."Research on metastable electron traps in the modified SOI materials induced by Si ion implantation".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26.2(2008):L1-L4. |
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