中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot

文献类型:期刊论文

作者Jiang, LM ; Wang, HL ; Wu, HT ; Gong, Q ; Feng, SL
刊名JOURNAL OF APPLIED PHYSICS
出版日期2009
卷号105期号:5页码:53710-53710
关键词GAN/INGAN/GAN DOUBLE HETEROSTRUCTURES LOW-DIMENSIONAL SYSTEMS SPONTANEOUS POLARIZATION LOCALIZED EXCITONS BINDING-ENERGY STATES WELLS PHOTOLUMINESCENCE PIEZOELECTRICITY NANOSTRUCTURES
通讯作者Wang, HL, Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
学科主题Physics ; Applied
收录类别SCI
公开日期2011-11-03
源URL[http://ir.sim.ac.cn/handle/331004/11179]  
专题上海微系统与信息技术研究所_无线、宽带、通讯技术_期刊论文
推荐引用方式
GB/T 7714
Jiang, LM,Wang, HL,Wu, HT,et al. External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot[J]. JOURNAL OF APPLIED PHYSICS,2009,105(5):53710-53710.
APA Jiang, LM,Wang, HL,Wu, HT,Gong, Q,&Feng, SL.(2009).External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot.JOURNAL OF APPLIED PHYSICS,105(5),53710-53710.
MLA Jiang, LM,et al."External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot".JOURNAL OF APPLIED PHYSICS 105.5(2009):53710-53710.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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