中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
External electric field elect on hydrogenic donor impurity in zinc-blende InGaN quantum dot

文献类型:期刊论文

作者Jiang, LM ; Wang, HL ; Wu, HT ; Gong, Q ; Feng, SL
刊名CHINESE PHYSICS LETTERS
出版日期2008-01-01
卷号25期号:8页码:3017-3020
关键词GAN/INGAN/GAN DOUBLE HETEROSTRUCTURES LOCALIZED EXCITONS PHOTOLUMINESCENCE NANOSTRUCTURES RECOMBINATION ENERGY STATES WELLS
ISSN号0256-307X
通讯作者Wang, HL, Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2011-11-03
源URL[http://ir.sim.ac.cn/handle/331004/11195]  
专题上海微系统与信息技术研究所_无线、宽带、通讯技术_期刊论文
推荐引用方式
GB/T 7714
Jiang, LM,Wang, HL,Wu, HT,et al. External electric field elect on hydrogenic donor impurity in zinc-blende InGaN quantum dot[J]. CHINESE PHYSICS LETTERS,2008,25(8):3017-3020.
APA Jiang, LM,Wang, HL,Wu, HT,Gong, Q,&Feng, SL.(2008).External electric field elect on hydrogenic donor impurity in zinc-blende InGaN quantum dot.CHINESE PHYSICS LETTERS,25(8),3017-3020.
MLA Jiang, LM,et al."External electric field elect on hydrogenic donor impurity in zinc-blende InGaN quantum dot".CHINESE PHYSICS LETTERS 25.8(2008):3017-3020.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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