An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect Transistor
文献类型：期刊论文
| 作者 | Chen, Y ; He, J ; Mu, XH ; Lou, HJ ; Zhang, LN ; Song, Y ; Yang, ZF ; Zhu, JX ; Cao, JC |
| 刊名 | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
 |
| 出版日期 | 2009-01-01 |
| 卷号 | 6期号:10页码:2247-2254 |
| 关键词 | 2-DIMENSIONAL ELECTRONIC FLUID SURROUNDING-GATE MOSFETS RESONANT DETECTION PLASMA-WAVES RADIATION SUBTERAHERTZ DESIGN MODEL |
| ISSN号 | 1546-1955 |
| 通讯作者 | He, J, Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China |
| 学科主题 | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-11-03 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/11047]  |
| 专题 | 上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, Y,He, J,Mu, XH,et al. An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect Transistor[J]. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,2009,6(10):2247-2254. |
| APA | Chen, Y.,He, J.,Mu, XH.,Lou, HJ.,Zhang, LN.,...&Cao, JC.(2009).An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect Transistor.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,6(10),2247-2254. |
| MLA | Chen, Y,et al."An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect Transistor".JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 6.10(2009):2247-2254. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。