Effects of a drift in GaAs growth rate on the electronic transport in resonant phonon terahertz quantum cascade lasers
文献类型：期刊论文
| 作者 | Han, YJ ; Cao, JC |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2009-01-01 |
| 卷号 | 24期号:9页码:95026-95026 |
| 关键词 | MONTE-CARLO METHOD SCATTERING SEMICONDUCTORS DEGENERACY THZ |
| ISSN号 | 0268-1242 |
| 通讯作者 | Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-11-03 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/11063]  |
| 专题 | 上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, YJ,Cao, JC. Effects of a drift in GaAs growth rate on the electronic transport in resonant phonon terahertz quantum cascade lasers[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009,24(9):95026-95026. |
| APA | Han, YJ,&Cao, JC.(2009).Effects of a drift in GaAs growth rate on the electronic transport in resonant phonon terahertz quantum cascade lasers.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,24(9),95026-95026. |
| MLA | Han, YJ,et al."Effects of a drift in GaAs growth rate on the electronic transport in resonant phonon terahertz quantum cascade lasers".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 24.9(2009):95026-95026. |
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