中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Numerical Simulation of Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal

文献类型:期刊论文

作者Wang, YL ; Yan, ZF ; Zhu, JX ; Lin, XN ; He, J ; Chan, MS ; Cao, JC
刊名JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
出版日期2010-01-01
卷号7期号:8页码:1386-1392
关键词PLASMA-WAVES DC CURRENT FLUID
ISSN号1546-1955
通讯作者He, J, Peking Univ, Sch Elect Engn & Comp Sci, Inst Microelect, TSRC, Beijing 100871, Peoples R China
学科主题Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2011-11-03
源URL[http://ir.sim.ac.cn/handle/331004/11095]  
专题上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式
GB/T 7714
Wang, YL,Yan, ZF,Zhu, JX,et al. Numerical Simulation of Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal[J]. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,2010,7(8):1386-1392.
APA Wang, YL.,Yan, ZF.,Zhu, JX.,Lin, XN.,He, J.,...&Cao, JC.(2010).Numerical Simulation of Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,7(8),1386-1392.
MLA Wang, YL,et al."Numerical Simulation of Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal".JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 7.8(2010):1386-1392.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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