中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
(Ga,Mn,N) Compounds Growth with Mass-Analyzed Low Energy Dual Ion Beam Deposition

文献类型:期刊论文

作者Zhang FQ(张富强); Chen NF(陈诺夫); Liu XL; Liu ZK; Yang SY; Chai CL
刊名Journal of Crystal Growth
出版日期2003
卷号252期号:1-3页码:202-207
ISSN号0022-0248
中文摘要The (Ga,Mn,N) samples were grown by the implantation of low-energy Mn ions into GaN/Al2O3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. Auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the Mn ions reach deeper in samples with higher substrate temperatures. Clear X-ray diffraction peak from (Ga,Mn)N is observed in samples grown at the higher substrate temperature. It indicates that under optimized substrate temperature and annealing conditions the solid solution (Ga,Mn)N phase in samples was formed with the same lattice structure as GaN and different lattice constant.
学科主题力学
类目[WOS]Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Crystallography ; Materials Science ; Physics
收录类别SCI
语种英语
WOS记录号WOS:000182145400030
公开日期2007-06-15 ; 2007-12-05 ; 2009-06-23
源URL[http://dspace.imech.ac.cn/handle/311007/15620]  
专题力学研究所_力学所知识产出(1956-2008)
推荐引用方式
GB/T 7714
Zhang FQ,Chen NF,Liu XL,et al. (Ga,Mn,N) Compounds Growth with Mass-Analyzed Low Energy Dual Ion Beam Deposition[J]. Journal of Crystal Growth,2003,252(1-3):202-207.
APA 张富强,陈诺夫,Liu XL,Liu ZK,Yang SY,&Chai CL.(2003).(Ga,Mn,N) Compounds Growth with Mass-Analyzed Low Energy Dual Ion Beam Deposition.Journal of Crystal Growth,252(1-3),202-207.
MLA 张富强,et al."(Ga,Mn,N) Compounds Growth with Mass-Analyzed Low Energy Dual Ion Beam Deposition".Journal of Crystal Growth 252.1-3(2003):202-207.

入库方式: OAI收割

来源:力学研究所

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