Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes
文献类型：期刊论文
| 作者 | Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2018 |
| 卷号 | 33期号:11页码:114004 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29367]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang. Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33(11):114004. |
| APA | Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang.(2018).Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33(11),114004. |
| MLA | Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang."Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33.11(2018):114004. |
入库方式： OAI收割
来源：半导体研究所
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