Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer
文献类型：期刊论文
| 作者 | Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du |
| 刊名 | SUPERLATTICES AND MICROSTRUCTURES
 |
| 出版日期 | 2018 |
| 卷号 | 122页码:74-79 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29362]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,122:74-79. |
| APA | Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du.(2018).Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer.SUPERLATTICES AND MICROSTRUCTURES,122,74-79. |
| MLA | Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du."Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer".SUPERLATTICES AND MICROSTRUCTURES 122(2018):74-79. |
入库方式： OAI收割
来源：半导体研究所
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