Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer
文献类型：期刊论文
| 作者 | Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2018 |
| 卷号 | 29期号:11页码:9321-9325 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29361]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du. Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(11):9321-9325. |
| APA | Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du.(2018).Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(11),9321-9325. |
| MLA | Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du."Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.11(2018):9321-9325. |
入库方式： OAI收割
来源：半导体研究所
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