Growth of AlGaN-based multiple quantum wells on SiC substrates
文献类型：期刊论文
| 作者 | Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2018 |
| 卷号 | 29期号:9页码:7756-7762 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29360]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin. Growth of AlGaN-based multiple quantum wells on SiC substrates[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(9):7756-7762. |
| APA | Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin.(2018).Growth of AlGaN-based multiple quantum wells on SiC substrates.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(9),7756-7762. |
| MLA | Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin."Growth of AlGaN-based multiple quantum wells on SiC substrates".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.9(2018):7756-7762. |
入库方式： OAI收割
来源：半导体研究所
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