Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio
文献类型：期刊论文
| 作者 | Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2018 |
| 卷号 | 112期号:15页码:151607 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29337]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du. Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio[J]. APPLIED PHYSICS LETTERS,2018,112(15):151607. |
| APA | Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du.(2018).Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio.APPLIED PHYSICS LETTERS,112(15),151607. |
| MLA | Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du."Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio".APPLIED PHYSICS LETTERS 112.15(2018):151607. |
入库方式： OAI收割
来源：半导体研究所
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