中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

文献类型:期刊论文

作者Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Wei Liu ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang ;   Wenjie Wang ;   Mo Li ;   Yuantao Zhang ;   Guotong Du
刊名Superlattices and Microstructures
出版日期2018
卷号117页码:228-234
源URL[http://ir.semi.ac.cn/handle/172111/29333]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Wei Liu ; Feng Liang ; Shuangtao Liu ; Liqun Zhang ; Wenjie Wang ; Mo Li ; Yuantao Zhang ; Guotong Du. The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells[J]. Superlattices and Microstructures,2018,117:228-234.
APA Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Wei Liu ; Feng Liang ; Shuangtao Liu ; Liqun Zhang ; Wenjie Wang ; Mo Li ; Yuantao Zhang ; Guotong Du.(2018).The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells.Superlattices and Microstructures,117,228-234.
MLA Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Wei Liu ; Feng Liang ; Shuangtao Liu ; Liqun Zhang ; Wenjie Wang ; Mo Li ; Yuantao Zhang ; Guotong Du."The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells".Superlattices and Microstructures 117(2018):228-234.

入库方式: OAI收割

来源:半导体研究所

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