中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells

文献类型:期刊论文

作者Jialin Huang ;   Wei Liu ;   Linkai Yi ;   Mei Zhou ;   Degang Zhao ;   Desheng Jiang
刊名SUPERLATTICES AND MICROSTRUCTURES
出版日期2018
卷号113页码:534-540
源URL[http://ir.semi.ac.cn/handle/172111/29330]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Jialin Huang ; Wei Liu ; Linkai Yi ; Mei Zhou ; Degang Zhao ; Desheng Jiang. The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,113:534-540.
APA Jialin Huang ; Wei Liu ; Linkai Yi ; Mei Zhou ; Degang Zhao ; Desheng Jiang.(2018).The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells.SUPERLATTICES AND MICROSTRUCTURES,113,534-540.
MLA Jialin Huang ; Wei Liu ; Linkai Yi ; Mei Zhou ; Degang Zhao ; Desheng Jiang."The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells".SUPERLATTICES AND MICROSTRUCTURES 113(2018):534-540.

入库方式: OAI收割

来源:半导体研究所

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