Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
文献类型：期刊论文
| 作者 | H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang |
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2018 |
| 卷号 | 765页码:245-248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29327]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang. Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD[J]. Journal of Alloys and Compounds,2018,765:245-248. |
| APA | H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang.(2018).Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD.Journal of Alloys and Compounds,765,245-248. |
| MLA | H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang."Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD".Journal of Alloys and Compounds 765(2018):245-248. |
入库方式： OAI收割
来源：半导体研究所
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