Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
文献类型：期刊论文
| 作者 | Jun Zheng; Zhi Liu; Yongwang Zhang; Yuhua Zuo; Chuanbo Li; Chunlai Xue; Buwen Cheng; Qiming Wang |
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2018 |
| 卷号 | 492页码:29-34 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29297]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Jun Zheng;Zhi Liu;Yongwang Zhang;Yuhua Zuo;Chuanbo Li;Chunlai Xue;Buwen Cheng;Qiming Wang. Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy[J]. Journal of Crystal Growth,2018,492:29-34. |
| APA | Jun Zheng;Zhi Liu;Yongwang Zhang;Yuhua Zuo;Chuanbo Li;Chunlai Xue;Buwen Cheng;Qiming Wang.(2018).Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy.Journal of Crystal Growth,492,29-34. |
| MLA | Jun Zheng;Zhi Liu;Yongwang Zhang;Yuhua Zuo;Chuanbo Li;Chunlai Xue;Buwen Cheng;Qiming Wang."Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy".Journal of Crystal Growth 492(2018):29-34. |
入库方式： OAI收割
来源：半导体研究所
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