中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence

文献类型:期刊论文

作者Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
刊名Nanotechnology
出版日期2019
卷号30期号:4页码:045604
源URL[http://ir.semi.ac.cn/handle/172111/29372]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li. Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence[J]. Nanotechnology,2019,30(4):045604.
APA Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li.(2019).Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.Nanotechnology,30(4),045604.
MLA Shaoteng Wu;Liancheng Wang;Zhiqiang Liu;Xiaoyan Yi;Yunyu Wang;Cheng Cheng;Chen Lin;Tao Feng;Shuo Zhang;Tao Li;Tongbo Wei;Jianchang Yan;Guodong Yuan;Junxi Wang;Jinmin Li."Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence".Nanotechnology 30.4(2019):045604.

入库方式: OAI收割

来源:半导体研究所

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