Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates
文献类型：期刊论文
| 作者 | Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2018 |
| 卷号 | 53期号:24页码:16439-16446 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29369]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li. Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates[J]. JOURNAL OF MATERIALS SCIENCE,2018,53(24):16439-16446. |
| APA | Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li.(2018).Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates.JOURNAL OF MATERIALS SCIENCE,53(24),16439-16446. |
| MLA | Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li."Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates".JOURNAL OF MATERIALS SCIENCE 53.24(2018):16439-16446. |
入库方式： OAI收割
来源：半导体研究所
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