中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

文献类型:期刊论文

作者Li, H ; Sang, JP ; Liu, C ; Lu, HB ; Cao, JC
刊名CENTRAL EUROPEAN JOURNAL OF PHYSICS
出版日期2008
卷号6期号:3页码:638-642
关键词CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE SAPPHIRE CRYSTAL LAYERS MOCVD GAN
ISSN号1895-1082
通讯作者Li, H, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat & Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2011-12-02
源URL[http://ir.sim.ac.cn/handle/331004/31622]  
专题上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式
GB/T 7714
Li, H,Sang, JP,Liu, C,et al. Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate[J]. CENTRAL EUROPEAN JOURNAL OF PHYSICS,2008,6(3):638-642.
APA Li, H,Sang, JP,Liu, C,Lu, HB,&Cao, JC.(2008).Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate.CENTRAL EUROPEAN JOURNAL OF PHYSICS,6(3),638-642.
MLA Li, H,et al."Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate".CENTRAL EUROPEAN JOURNAL OF PHYSICS 6.3(2008):638-642.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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