Terahertz-induced impact ionization effect in semiconductor heterojunctions
文献类型：期刊论文
| 作者 | Cao, JC |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
 |
| 出版日期 | 2005 |
| 卷号 | 44期号:10页码:7364-7366 |
| 关键词 | BALANCE-EQUATION APPROACH TRANSPORT SYSTEMS DRIVEN FIELD |
| ISSN号 | 0021-4922 |
| 通讯作者 | Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informay, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-12-02 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/31632]  |
| 专题 | 上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, JC. Terahertz-induced impact ionization effect in semiconductor heterojunctions[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,2005,44(10):7364-7366. |
| APA | Cao, JC.(2005).Terahertz-induced impact ionization effect in semiconductor heterojunctions.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,44(10),7364-7366. |
| MLA | Cao, JC."Terahertz-induced impact ionization effect in semiconductor heterojunctions".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44.10(2005):7364-7366. |
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