中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric

文献类型:期刊论文

作者Wang, Q ; Song, ZT ; Liu, WL ; Lin, CL ; Wang, TH
刊名APPLIED SURFACE SCIENCE
出版日期2004
卷号230期号:1-4页码:8-11
关键词INSULATOR-SEMICONDUCTOR STRUCTURE GERMANIUM NANOCRYSTALS SILICON NANOCRYSTALS MEMORIES SI GROWTH MATRIX CHARGE FILMS
ISSN号0169-4332
通讯作者Wang, Q, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai, Peoples R China
学科主题Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2011-12-02
源URL[http://ir.sim.ac.cn/handle/331004/31677]  
专题上海微系统与信息技术研究所_新能源技术_期刊论文
推荐引用方式
GB/T 7714
Wang, Q,Song, ZT,Liu, WL,et al. Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric[J]. APPLIED SURFACE SCIENCE,2004,230(1-4):8-11.
APA Wang, Q,Song, ZT,Liu, WL,Lin, CL,&Wang, TH.(2004).Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric.APPLIED SURFACE SCIENCE,230(1-4),8-11.
MLA Wang, Q,et al."Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric".APPLIED SURFACE SCIENCE 230.1-4(2004):8-11.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。