Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs
文献类型：期刊论文
| 作者 | Guo, XG ; Lu, W ; Chen, XS ; Cao, JC |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 19期号:11页码:1325-1328 |
| 关键词 | TOTAL-ENERGY CALCULATIONS WAVE BASIS-SET N-TYPE GAAS THERMAL-STABILITY LAYERS SEMICONDUCTORS IRRADIATION DEFECTS |
| ISSN号 | 0268-1242 |
| 通讯作者 | Guo, XG, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, YuTian Rd 500, Shanghai 200083, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-12-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/37375]  |
| 专题 | 上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Guo, XG,Lu, W,Chen, XS,et al. Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2004,19(11):1325-1328. |
| APA | Guo, XG,Lu, W,Chen, XS,&Cao, JC.(2004).Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,19(11),1325-1328. |
| MLA | Guo, XG,et al."Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19.11(2004):1325-1328. |
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